symbol v ds v gs i dm t j , t stg symbol typ max 65 90 85 125 r q jl 43 60 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage -20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv -2.8 -15 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d -3.5 AO3419 20v p-channel mosfet product summary v ds (v) = -20v i d = -3.5 a (v gs = -10v) r ds(on) < 75m w (v gs = -10v) r ds(on) < 95m w (v gs = -4.5v) r ds(on) < 145m w (v gs = -2.5v) esd rating: 2000v hbm general description the AO3419 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in p wm applications. it is esd protected. sot23 top view bottom view d g s g s d s g d alpha & omega semiconductor, ltd. www.aosmd.com
AO3419 symbol min typ max units bv dss -20 v -0.5 t j =55c -2.5 1 m a 10 m a v gs(th) -0.7 -0.9 -1.4 v i d(on) -15 a 59 75 t j =125c 83 105 76 95 m w 111 145 m w 225 m w g fs 6.8 s v sd -1 -0.81 v i s -2 a c iss 512 620 pf c oss 77 pf c rss 62 pf r g 9.2 13 w q g 5.5 6.6 nc q gs 0.8 nc q gd 1.9 nc t d(on) 5 ns t r 6.7 ns t d(off) 28 ns t f 13.5 ns t rr 9.8 12 ns q rr 2.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-3.5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-3.5a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ma gate threshold voltage v ds =v gs i d =-250 m a v ds =-16v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current v ds =0v, v gs =10v i gss m w v gs =-4.5v, i d =-3a i s =-1a,v gs =0v v ds =-5v, i d =-3.5a v gs =-1.8v, i d =-0.5a i f =-3.5a, di/dt=100a/ m s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3.5a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-10v, r l =2.8 w , r gen =3 w turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 4: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO3419 typical electrical and thermal characteristics 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.0v -5.0v -3.0v -6.0v -7.0v -8.0v -9.0v -10.0v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 100 120 140 160 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-3a, v gs =-4.5v i d =-1a, v gs =-2.5v i d =-3.5a, v gs =-10v 40 60 80 100 120 140 160 180 200 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =-3.5a 25c 125c 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10v alpha & omega semiconductor, ltd. www.aosmd.com
AO3419 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) i d =-3.5a 0 200 400 600 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c 10 m s r ds(on) limited t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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